Create World-Leading In-Situ Electron Microscopy Solutions
公司簡(jiǎn)介
CHIPNOVA(超新芯)是早期原位芯片技術(shù)開發(fā)研究者、國(guó)家高層次引進(jìn)人才創(chuàng)辦的高科技企業(yè),致力于為客戶提供全面的原位表征方案,并將相關(guān)技術(shù)應(yīng)用服務(wù)于民用領(lǐng)域。CHIPNOVA擁有MEMS芯片制造和原位電鏡方面的資深團(tuán)隊(duì),10余年來產(chǎn)品和技術(shù)不斷迭代提升,目前已涉及原位芯片、生化醫(yī)療芯片、集成傳感芯片等。其中原位芯片在材料、催化、能源、環(huán)境、化學(xué)、生物等領(lǐng)域廣泛應(yīng)用,相關(guān)成果發(fā)表在Science、Nature子刊等SCI期刊上,服務(wù)包括北大、浙大等眾多高校和科研單位,推動(dòng)了相關(guān)領(lǐng)域的科技進(jìn)步。
一、Spring Series In-Situ Holders(透射電鏡液體光熱電原位系統(tǒng))
Spring Series In-Situ Holders(透射電鏡液體光熱電原位系統(tǒng))是在原位樣品臺(tái)內(nèi)部構(gòu)建小型的液體環(huán)境芯片實(shí)驗(yàn)室,在液體環(huán)境內(nèi)對(duì)材料進(jìn)行原子分辨高時(shí)空精度分析。根據(jù)客戶需求,結(jié)合MEMS微加工工藝,內(nèi)置加熱模塊、光學(xué)模塊和電學(xué)模塊,結(jié)合透射電鏡成像系統(tǒng),實(shí)現(xiàn)對(duì)單個(gè)納米材料在熱、光、電外場(chǎng)刺激條件下的形貌結(jié)構(gòu)、化學(xué)組分、元素價(jià)態(tài)的原位動(dòng)態(tài)觀測(cè),極大擴(kuò)展了透射電鏡的功能與應(yīng)用領(lǐng)域。
圖1 Spring Series In-Situ Holders(透射電鏡液體光熱電原位系統(tǒng))示意圖
Spring Series In-Situ Holders(透射電鏡液體光熱電原位系統(tǒng))可在透射電鏡中實(shí)現(xiàn)液體樣品的電化學(xué)反應(yīng)/加熱過程/光學(xué)反應(yīng)過程的實(shí)時(shí)動(dòng)態(tài)高分辨成像。
應(yīng)用案例:
圖2
Structure and composition analysis of Sn@SnOx nanocrystals synthesized by thermal deposition. a Low- and b high-magnification TEM images and c HAADF-STEM image of the Sn-SnOx core-shell structure and corresponding elemental mapping of Sn (green) and O (red).
Peng, X., Zhu, FC., Jiang, YH. et al. Identification of a quasi-liquid phase at solid–liquid interface.Nat Commun 13,3601 (2022).
圖3
The in situ observation of layer growth dynamics of InCl3.3H2O ultrathin nanosheets. Sequential TEM images of A) the nucleate growth of a single layer, C) the enation growth of a single layer, E) the enation growth of two layers, B,D) the corresponding statistics of the length of growth layer in (A,C) as a function of time, and F) statistics of the angle of enation growth layer in (E) as a function of time, respectively.
Zhang J, Jiang Y, Fan Q, et al. Atomic Scale Tracking of Single Layer Oxide Formation: Self‐Peeling and Phase Transition in Solution[J]. Small Methods, 2021, 5(7): 2001234.
圖4
In situ TEM observation of the structural changes of hydrogen evolution active sites under different illumination time.
In situ liquid optics chip: 20 nm silicon nitride.HRTEM images of Cu2O samples with different irradiated time: (a) 1 h, (b) 2 h, (c) 3 h, and schematic diagrams of (d) Cu2O structure change under irradiation.
Yu, et al., Appl. Catal., B 284 (2021) 119743.
圖5/圖6 流體流動(dòng)及擴(kuò)散對(duì)晶體生長(zhǎng)形貌影響觀察
Efficient CO2 reduction MOFs derivatives transformation mechanism revealed by in-situ liquid phase TEM[J]. Applied Catalysis B: Environmental, 2022, 307: 121164.
圖7/圖8 光照下環(huán)境氛圍對(duì)納米團(tuán)簇演變過程影響
Visualizing light-induced dynamic structural transformations of Au clusters-based photocatalyst via in situ TEM[J]. Nano Research, 2021, 14(8): 2805-2809.
圖9
In situ atomic resolution HRTEM observation on the behaviors of sulfobetaine molecules at the solid-liquid interface under external electric field and the formation of the waterproof layer around the negative electrode surface.
Controlling Interfacial Structural Evolution in Aqueous Electrolyte via Anti-Electrolytic Zwitterionic Waterproofing. Adv. Funct. Mater. 2022, 2207140.
DOI: 10.1002/adfm.202207140
圖10/ 圖11
HAADF-STEM images and EDS mapping of the porous carbon electrodes with different charging conditions. and the HRTEM images showing the self-aggregation of sulfobetaine in the bulk liquid phase.
Controlling Interfacial Structural Evolution in Aqueous Electrolyte via Anti-Electrolytic Zwitterionic Waterproofing. Adv. Funct. Mater. 2022, 2207140.
DOI: 10.1002/adfm.202207140
二、Volcano Series In-Situ Holders(透射電鏡雙傾光熱電原位系統(tǒng))
Volcano Series In-Situ Holders(透射電鏡雙傾光熱電原位系統(tǒng))針對(duì)快速變溫過程原位高分辨研究需求構(gòu)建的原位觀察平臺(tái),根據(jù)客戶需求結(jié)合MEMS微加工工藝內(nèi)置加熱模塊、電學(xué)模塊和光學(xué)模塊,通過對(duì)樣品的外場(chǎng)控制完成熱學(xué)、電學(xué)及光學(xué)性質(zhì)的研究。
ChipNova Volcano Series In-Situ Holders(透射電鏡雙傾光熱電原位系統(tǒng)),同時(shí)涵蓋原位雙傾功能模塊、光學(xué)功能模塊、電學(xué)功能模塊、加熱功能模塊,可在透射電鏡中實(shí)現(xiàn)固體樣品微結(jié)構(gòu)變化的原位表征。在原位雙傾轉(zhuǎn)角功能的基礎(chǔ)上,通過開創(chuàng)性的將光作為外部條件搭載在原位樣品臺(tái)系統(tǒng)上,結(jié)合MEMS微納加工制作的超低飄移微區(qū)加熱芯片,實(shí)現(xiàn)全新的雙傾-光-電-熱四功能耦合,在操作α/β角度轉(zhuǎn)動(dòng)的同時(shí),可同時(shí)引入光場(chǎng)刺激、電場(chǎng)刺激、熱場(chǎng)刺激,各功能模塊可同時(shí)在線工作并且相互獨(dú)立,互不干擾。
圖12 Volcano Series In-Situ Holders(透射電鏡雙傾光熱電原位系統(tǒng))
應(yīng)用案例:
圖13 1300℃恒溫,金屬合金擴(kuò)散,芯片溫度穩(wěn)定性好,漂移率低
圖14 室溫-1000℃變溫過程MOF材料碳化研究
三、Gravity Series In-Situ Holders(透射電鏡高溫力學(xué)原位系統(tǒng))
廈門超新芯科技有限公司所研發(fā)生產(chǎn)的Gravity Series In-Situ Holders(透射電鏡高溫力學(xué)原位系統(tǒng))是通過在原位樣品桿內(nèi)置力學(xué)測(cè)量模塊、三維納米運(yùn)動(dòng)模塊、原位加熱芯片,可對(duì)材料進(jìn)行應(yīng)力及熱場(chǎng)條件下原子分辨高時(shí)空分析。通過該系統(tǒng),在透射電鏡中通過納米探針或者原位芯片對(duì)樣品進(jìn)行操縱和拉應(yīng)力、壓應(yīng)力測(cè)量。并且在測(cè)量樣品壓力同時(shí)實(shí)現(xiàn)對(duì)樣品1000℃的加熱,在高溫力學(xué)測(cè)量的同時(shí),能夠動(dòng)態(tài)、高分辨地對(duì)樣品的晶體結(jié)構(gòu)、組分進(jìn)行綜合表征。
具備的功能包括:原位壓縮微納試樣進(jìn)行應(yīng)力應(yīng)變曲線監(jiān)測(cè);原位拉伸微納試樣進(jìn)行應(yīng)力應(yīng)變曲線監(jiān)測(cè);具有超高精度和靈敏度的力學(xué)參數(shù)和應(yīng)變量測(cè)試能力,能準(zhǔn)確得到定量的載荷和位移的數(shù)據(jù),且具有*的穩(wěn)定性。特色功能:恒定載荷控制功能,以適用于材料的蠕變特性研究;恒定位移控制功能,以適用于材料的應(yīng)力松弛的研究。
圖15 Gravity Series In-Situ Holders(透射電鏡高溫力學(xué)原位系統(tǒng))示意圖
應(yīng)用案例:
圖16/圖17納米碳球壓縮原位力學(xué)實(shí)驗(yàn)
圖18 鎢納米棒原位壓縮過程